We demonstrate in situ measurements on future memristive devices in the SEM. These measurements are supported by ex situ electrical probing and TEM investigations. For this purpose, we conduct these experiments on electron beam transparent silicon nitride membranes with structured gold electrodes. The grids are fabricated via a combination of UV- and electron beam lithography. This allows a flexible electrode design with separations between 50 um and 70 nm. Accordingly, this grid is suitable for the characterization of both microstructures and nanostructures.The investigated materials are random networks of carbon nanotubes (CNTs) and bimetallic clusters. Of special interest are 3-dimensional arranged CNT-networks as in Aerographite and 2-dimensional arranged CNTs by electrophoresis. Resistive switching utilizing bimetallic clusters is investigated on embedded and non-embedded clusters.