The memsensor concept combines the functionality of a sensor with the characteristics of a memristive device, which allows for additional features, such as habituation. Zinc oxide (ZnO), with its large variety of interesting properties, shows the capability to act both as a memristive and a sensitive component simultaneously. This might make it suitable for the functional part of a memsensor device as well as for the integration into a neural small world network.
We investigate the possibilities to embed ZnO into memristive networks. As an additive manufacturing method we use direct ink writing to deposit either pristine ZnO or Zn-particles, which are subsequently thermally oxidized to ZnO using an infrared laser, and the two fabrication paths are evaluated against each other.
The ZnO devices fabricated by the direct ink writing process are characterized with regard to their UV-sensing properties by IV-measurements with pulsed UV-illumination, furthermore its capabilities in gas sensing memristive applications will be discussed.