The search for novel bioinspired signal processing and computation strategies has greatly stimulated the research on memristive devices over the past ten years. In this work, we report on memristive nanocomposites based on bimetallic nanoparticles (AgPt or AgAu) embedded in oxidic (SiO2) and non-oxidic (Si3N4) matrices. Apart from most memristive devices, which exhibit bipolar or unipolar switching characteristics, these nanocomposite devices show diffusive switching dynamics. They are characterized by threshold switching to a low resistance state (LRS) and spontaneous relaxation back to the high resistance state (HRS) at the same polarity. Conductive AFM measurements were employed to characterize the switching dynamics of single nanoparticles within these devices. Relevant considerations regarding the design of memristive nanocomposite devices are deduced based on electrical characterizations. Finally, opportunities to enhance the functionality of memristive nanocomposites towards memsensors via combination with wide band gap semiconductors are discussed.